JBX-9500FS

The JEOL JBX-9500FS is a state-of-the-art 100kV electron beam lithography (EBL) system renowned for its exceptional throughput and positional accuracy among spot beam lithography systems. Designed to accommodate up to 300mm diameter wafers and 6-inch masks, it serves a broad spectrum of applications, including nanoimprint lithography, photonic devices, and communication devices.

Key Features:

• High Throughput and Precision: The JBX-9500FS achieves a maximum scan speed of 100MHz, with overlay accuracy of ±11nm, field stitching accuracy of ±10nm, and positional accuracy within a 1000µm × 1000µm field of ±9nm. These specifications position it at the forefront of spot beam lithography systems in terms of performance.
• Advanced Beam Control: Equipped with a 20-bit Beam Positioning Digital-to-Analog Converter (DAC) and a 14-bit Scan DAC, the system offers a high-resolution scan step of 0.25nm for writing data increments of 1nm, ensuring precise pattern replication.
• Enhanced Scan Speed: The system’s high scan speed of up to 100MHz maintains short scan steps even during large-current writing, enhancing throughput without compromising pattern accuracy.
• Laser Beam Control (LBC): The JBX-9500FS utilizes LBC to achieve a minimum beam positioning step of 0.15nm (λ/4096), contributing to its world-class positional accuracy.
• Auto Calibration Function: A unique auto calibration feature developed by JEOL allows for automatic corrections, ensuring reliable and stable pattern writing over extended periods. Users can set the timing of auto corrections for each field or pattern, making it particularly effective for unattended long-duration writing sessions, such as over weekends or holidays.
• Versatile Substrate Compatibility: The system accommodates up to 300mm diameter wafers, 6-inch masks, and micro samples of any size, catering to diverse research and production needs.
• Material Cassette Transfer System: An optional material cassette transfer system enables the loading of up to 10 cassettes, enhancing operational efficiency in production environments.
• Fine Pitch Control Program: The inclusion of a Fine Pitch Control Program allows for the fabrication of chirped-period gratings, such as those used in Distributed Feedback (DFB) lasers, expanding the system’s application range.

Specifications:

• Electron Gun: ZrO/W Schottky type
• Writing Method: Spot beam, vector scan, step & repeat
• Accelerating Voltage: 100kV
• Material Size Compatibility: Up to 300mm diameter wafers, up to 6-inch masks, and micro samples of any size
• Maximum Field Size: 1000µm × 1000µm
• Stage Movement Range: 260mm × 240mm
• Stage Control Unit Resolution:15nm (λ/4096)
• Overlay Accuracy: ≤±11nm
• Field Stitching Accuracy: ≤±10nm (for 1000µm × 1000µm field)
• Positional Accuracy Within Field Plane: ≤±9nm (for 1000µm × 1000µm field)
• Beam Positioning DAC: 20-bit
• Scan Speed: Up to 100MHz

With over four decades of experience, JEOL has established a strong track record in delivering EBL systems to research institutions and production lines worldwide. The JBX-9500FS continues this legacy, offering unparalleled precision and versatility for advanced nanofabrication applications.

For more detailed information about the JBX-9500FS and its applications, please visit the official JEOL website.