JBX-3050MV/S

The JBX-3050MV/S is a variable-shape electron beam lithography system for masks and reticles up to 45nm node design rule. Its advanced technology achieves high speed, high precision, and high reliability. This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat stage.

Features

The JBX-3050MV/S is an electron beam lithography system for mask/reticle fabrication that meets the design rule of 45 nm. This system features pattern writing with high speed, high accuracy, and high reliability, achieved by high-end technology.

Specifications

Stitching accuracy: ≤±3.8 nm

Overlay accuracy: ≤±7 nm

For further information about its features, visit the official JEOL website.